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OPTICAL GAIN IN LIGHTLY DOPED GAAS
被引:35
作者
:
SHAKLEE, KL
论文数:
0
引用数:
0
h-index:
0
SHAKLEE, KL
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
LEHENY, RF
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1971年
/ 19卷
/ 08期
关键词
:
D O I
:
10.1063/1.1653928
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:302 / &
相关论文
共 12 条
[1]
BASOV NG, 1966, SOV PHYS DOKL, V11, P522
[2]
Benoit C., 1969, PHYS REV, V177, P567
[3]
DOPING-DEPENDENCE OF LUMINESCENCE IN INP AT VERY HIGH EXCITATION LEVELS
GOBEL, E
论文数:
0
引用数:
0
h-index:
0
GOBEL, E
QUEISSER, HJ
论文数:
0
引用数:
0
h-index:
0
QUEISSER, HJ
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
PILKUHN, MH
[J].
SOLID STATE COMMUNICATIONS,
1971,
9
(07)
: 429
-
&
[4]
EFFECTS OF EXCITATION IN INTENSITY ON PHOTOLUMINESCENCE NEAR BADGAP OF N-INP
HEIM, U
论文数:
0
引用数:
0
h-index:
0
机构:
Physikalisches Institut, Universität Frankfurt/M.
HEIM, U
RODER, O
论文数:
0
引用数:
0
h-index:
0
机构:
Physikalisches Institut, Universität Frankfurt/M.
RODER, O
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
Physikalisches Institut, Universität Frankfurt/M.
PILKUHN, MH
[J].
SOLID STATE COMMUNICATIONS,
1969,
7
(17)
: 1173
-
&
[5]
MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
JOHNSON, MR
论文数:
0
引用数:
0
h-index:
0
JOHNSON, MR
ROSSI, JA
论文数:
0
引用数:
0
h-index:
0
ROSSI, JA
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
GROVES, WO
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(04)
: 151
-
&
[6]
EXCITON-EXCITON INTERACTION IN CDS, CDSE, AND ZNO
MAGDE, D
论文数:
0
引用数:
0
h-index:
0
MAGDE, D
MAHR, H
论文数:
0
引用数:
0
h-index:
0
MAHR, H
[J].
PHYSICAL REVIEW LETTERS,
1970,
24
(16)
: 890
-
&
[7]
THRESHOLD REQUIREMENTS AND CARRIER INTERACTION EFFECTS IN GAAS PLATELET LASERS (77 DEGREES K)
ROSSI, JA
论文数:
0
引用数:
0
h-index:
0
ROSSI, JA
KEUNE, KL
论文数:
0
引用数:
0
h-index:
0
KEUNE, KL
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
: 312
-
+
[8]
LASER TRANSITION AND PHOTON ENERGY OF GAAS IN LIGHTLY-DOPED LIMIT
ROSSI, JA
论文数:
0
引用数:
0
h-index:
0
ROSSI, JA
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
WILLIAMS, FV
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, FV
BURD, JW
论文数:
0
引用数:
0
h-index:
0
BURD, JW
[J].
APPLIED PHYSICS LETTERS,
1968,
13
(04)
: 117
-
&
[9]
PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY IN UNDOPED EPITAXIAL GAAS
SHAH, J
论文数:
0
引用数:
0
h-index:
0
SHAH, J
LEITE, RCC
论文数:
0
引用数:
0
h-index:
0
LEITE, RCC
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
[J].
PHYSICAL REVIEW,
1969,
184
(03):
: 811
-
&
[10]
DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS
SHAKLEE, KL
论文数:
0
引用数:
0
h-index:
0
SHAKLEE, KL
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
LEHENY, RF
[J].
APPLIED PHYSICS LETTERS,
1971,
18
(11)
: 475
-
&
←
1
2
→
共 12 条
[1]
BASOV NG, 1966, SOV PHYS DOKL, V11, P522
[2]
Benoit C., 1969, PHYS REV, V177, P567
[3]
DOPING-DEPENDENCE OF LUMINESCENCE IN INP AT VERY HIGH EXCITATION LEVELS
GOBEL, E
论文数:
0
引用数:
0
h-index:
0
GOBEL, E
QUEISSER, HJ
论文数:
0
引用数:
0
h-index:
0
QUEISSER, HJ
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
PILKUHN, MH
[J].
SOLID STATE COMMUNICATIONS,
1971,
9
(07)
: 429
-
&
[4]
EFFECTS OF EXCITATION IN INTENSITY ON PHOTOLUMINESCENCE NEAR BADGAP OF N-INP
HEIM, U
论文数:
0
引用数:
0
h-index:
0
机构:
Physikalisches Institut, Universität Frankfurt/M.
HEIM, U
RODER, O
论文数:
0
引用数:
0
h-index:
0
机构:
Physikalisches Institut, Universität Frankfurt/M.
RODER, O
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
Physikalisches Institut, Universität Frankfurt/M.
PILKUHN, MH
[J].
SOLID STATE COMMUNICATIONS,
1969,
7
(17)
: 1173
-
&
[5]
MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
JOHNSON, MR
论文数:
0
引用数:
0
h-index:
0
JOHNSON, MR
ROSSI, JA
论文数:
0
引用数:
0
h-index:
0
ROSSI, JA
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
GROVES, WO
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(04)
: 151
-
&
[6]
EXCITON-EXCITON INTERACTION IN CDS, CDSE, AND ZNO
MAGDE, D
论文数:
0
引用数:
0
h-index:
0
MAGDE, D
MAHR, H
论文数:
0
引用数:
0
h-index:
0
MAHR, H
[J].
PHYSICAL REVIEW LETTERS,
1970,
24
(16)
: 890
-
&
[7]
THRESHOLD REQUIREMENTS AND CARRIER INTERACTION EFFECTS IN GAAS PLATELET LASERS (77 DEGREES K)
ROSSI, JA
论文数:
0
引用数:
0
h-index:
0
ROSSI, JA
KEUNE, KL
论文数:
0
引用数:
0
h-index:
0
KEUNE, KL
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
: 312
-
+
[8]
LASER TRANSITION AND PHOTON ENERGY OF GAAS IN LIGHTLY-DOPED LIMIT
ROSSI, JA
论文数:
0
引用数:
0
h-index:
0
ROSSI, JA
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
WILLIAMS, FV
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, FV
BURD, JW
论文数:
0
引用数:
0
h-index:
0
BURD, JW
[J].
APPLIED PHYSICS LETTERS,
1968,
13
(04)
: 117
-
&
[9]
PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY IN UNDOPED EPITAXIAL GAAS
SHAH, J
论文数:
0
引用数:
0
h-index:
0
SHAH, J
LEITE, RCC
论文数:
0
引用数:
0
h-index:
0
LEITE, RCC
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
[J].
PHYSICAL REVIEW,
1969,
184
(03):
: 811
-
&
[10]
DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS
SHAKLEE, KL
论文数:
0
引用数:
0
h-index:
0
SHAKLEE, KL
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
LEHENY, RF
[J].
APPLIED PHYSICS LETTERS,
1971,
18
(11)
: 475
-
&
←
1
2
→