DIFFUSION OF ELECTRICALLY-ACTIVE COBALT IN SILICON

被引：5

作者：

HASHIMOTO, K

NAKASHIMA, H

HASHIMOTO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.1776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1776 / 1777

页数：2

共 11 条

[1]

CRANK J, 1975, MATH DIFFUSION, P144

[2] DIFFUSION OF GOLD IN SEMI-INFINITE SINGLE-CRYSTALS OF SILICON [J].

HUNTLEY, FA ;

WILLOUGHBY, AF .

PHILOSOPHICAL MAGAZINE, 1973, 28 (06) :1319-1340

[3] DIFFUSION-COEFFICIENT OF COBALT IN SILICON [J].

KITAGAWA, H ;

HASHIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) :173-174

[4] SOLID SOLUBILITY OF COBALT IN SILICON [J].

KITAGAWA, H ;

HASHIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) :857-858

[5] ENERGY-LEVELS AND SOLUBILITY OF ELECTRICALLY ACTIVE COBALT IN SILICON STUDIED BY COMBINED HALL AND DLTS MEASUREMENTS [J].

KITAGAWA, H ;

NAKASHIMA, H ;

HASHIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (03) :373-374

[6] CALCULATION OF SUBSTITUTIONAL IMPURITY DISTRIBUTION BY DISSOCIATIVE MECHANISM [J].

MOROOKA, M ;

YOSHIDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10) :1409-1411

[7] ENERGY-LEVEL AND SOLID SOLUBILITY OF COBALT IN SILICON BY IN-DEPTH PROFILE MEASUREMENT [J].

NAKASHIMA, H ;

TOMOKAGE, H ;

KITAGAWA, H ;

HASHIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (06) :776-777

[8] A NOTE ON THE THEORY OF DIFFUSION OF COPPER IN GERMANIUM [J].

STURGE, MD .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470) :297-306

[9] ANNEALING OF SUPERSATURATED COBALT IN SILICON [J].

SUWAKI, H ;

HASHIMOTO, K ;

NAKASHIMA, H ;

HASHIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (12) :1952-1953

[10]

TOMOKAGE H, 1981, MEM FAC ENG KYUSHU U, V41, P59

← 1 2 →