DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION

被引：41

作者：

BOIS, D

CHANTRE, A

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 03期

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D O I：

10.1051/rphysap:01980001503063100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：631 / 646

页数：16

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[11] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[12] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES
HOUNG, YM
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3348 - 3352
[13] DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS
HURTES, C
BOULOU, M
MITONNEAU, A
BOIS, D
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 821 - 823
[14] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION
KUKIMOTO, H
HENRY, CH
MERRITT, FR
[J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2486 - 2499
[15] Lang D. V., 1977, I PHYS C SER, V31, P70
[16] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY
LANG, DV
LOGAN, RA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066
[17] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[18] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS
LANG, DV
LOGAN, RA
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639
[19] LANG DV, 1975, I PHYS C SER, V23, P581
[20] DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS
LEFEVRE, H
SCHULZ, M
[J]. APPLIED PHYSICS, 1977, 12 (01): : 45 - 53

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