THE PHENOMENOLOGY OF DIELECTRIC-BREAKDOWN IN THIN SILICON DIOXIDE FILMS - AL CATHODES AND P-TYPE SI ANODES

被引：17

作者：

FALSTER, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3355 / 3370

页数：16

共 41 条

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