PARALLEL OXIDATION MODEL FOR SI INCLUDING BOTH MOLECULAR AND ATOMIC OXYGEN MECHANISMS

被引：7

作者：

DELARIOS, JM ^{[1
]}

HELMS, CR ^{[1
]}

KAO, DB ^{[1
]}

DEAL, BE ^{[1
]}

机构：

[1] ADVANTAGE PROD TECHNOL INC,SUNNYVALE,CA 94086

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90422-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：89 / 102

页数：14

共 29 条

[21] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .2. PHYSICAL-MECHANISMS [J].

MASSOUD, HZ ;

PLUMMER, JD ;

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2693-2700

[22]

MASSOUD HZ, 1983, THESIS STANFORD U

[23] EFFECTS OF CORONA-DISCHARGE INDUCED OXYGEN ION-BEAMS AND ELECTRIC-FIELDS ON SILICON OXIDATION-KINETICS .1. ION-BEAMS EFFECTS [J].

MODLIN, DN ;

TILLER, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1163-1168

[24]

NORTON FJ, 1961, NATURE, V171, P701

[25]

PLUMMER JD, 1983, PROCESS DEVICE SIMUL

[26] KINETICS OF HIGH-PRESSURE OXIDATION OF SILICON IN PYROGENIC STEAM [J].

RAZOUK, RR ;

LIE, LN ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) :2214-2220

[27] AN O-18 STUDY OF THE OXIDATION MECHANISM OF SILICON IN DRY OXYGEN [J].

ROCHET, F ;

AGIUS, B ;

RIGO, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :914-923

[28]

SCHWETTMANN FN, 1978, EXTENDED ABSTRACTS, V781

[29] OPTICAL-CONSTANTS OF SILICON AND DRY OXYGEN OXIDES OF SILICON AT 5461A [J].

TAFT, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :968-972

← 1 2 3 →