LASER PROCESSING IN THE PREPARATION OF SILICON SOLAR-CELLS

被引：12

作者：

MULLER, JC

FOGARASSY, E

SALLES, D

STUCK, R

SIFFERT, PM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：815 / 821

页数：7

共 31 条

[21]

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[22]

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NARAYAN, J ;

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :338-340

[24] SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON [J].

SCHMIDT, PF ;

STICKLER, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) :1188-1189

[25]

STUCK R, 1979, LASER ELECTRON BEAM

[26]

STUCK R, 1980, 14TH P IEEE PHOT SPE

[27] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

[28] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

WANG, JC ;

WOOD, RF ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458

[29]

WHITE CW, P LASER SOLID INTERA, P275

[30] LASER ANNEALING OF DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J].

YOUNG, RT ;

NARAYAN, J .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :14-16

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