DIFFUSION PROFILES OF ARSENIC IN SILICON OBSERVED BY BACKSCATTERING METHOD AND BY ELECTRICAL MEASUREMENT

被引：4

作者：

OHKAWA, S ^{[1
]}

NAKAJIMA, Y ^{[1
]}

SAKURAI, T ^{[1
]}

NISHI, H ^{[1
]}

FUKUKAWA, Y ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 02期

关键词：

D O I：

10.1143/JJAP.13.361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：361 / 362

页数：2

共 9 条

[1] DIFFUSION MODEL FOR ARSENIC IN SILICON [J].

CHIU, TL ;

GHOSH, HN .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) :472-&

[2] A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE [J].

CHOU, S ;

DAVIDSON, LA ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1970, 17 (01) :23-&

[3] INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J].

HU, SM ;

SCHMIDT, S .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4272-+

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[5] ARSENIC ISOCONCENTRATION DIFFUSION STUDIES IN SILICON [J].

MASTERS, BJ ;

FAIRFIEL.JM .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2390-&

[6] ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].

MEYER, O ;

GYULAI, J ;

MAYER, JW .

SURFACE SCIENCE, 1970, 22 (02) :263-&

[7]

Nakajima Y., 1972, Fujitsu Scientific and Technical Journal, V8, P93

[8] ARSENIC CLUSTERING IN SILICON [J].

SCHWENKER, RO ;

PAN, ES ;

LEVER, RF .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) :3195-+

[9] STOPPING CROSS SECTIONS FOR 0.3-TO 1.7-MEV HELIUM IONS IN SILICON AND SILICON DIOXIDE [J].

THOMPSON, DA ;

MACKINTO.WD .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) :3969-&

← 1 →