A MODEL FOR OXIDATION OF SILICON BY OXYGEN

被引:1
作者
HELMS, CR [1 ]
CRISTY, SS [1 ]
CONDON, JB [1 ]
机构
[1] UNION CARBIDE CORP,DIV NUCL,OAK RIDGE,TN 37830
关键词
D O I
10.1149/1.2124154
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1375 / 1377
页数:3
相关论文
共 15 条
[1]  
ASPENES DE, 1980, J ELECTROCHEM SOC, V127, P1359
[2]   SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY [J].
BLANC, J ;
BUIOCCHI, CJ ;
ABRAHAMS, MS ;
HAM, WE .
APPLIED PHYSICS LETTERS, 1977, 30 (02) :120-122
[3]  
CHEN JJ, 1978, PHYSICS SIO2 ITS INT
[4]   EVALUATION OF SECONDARY ION MASS-SPECTROMETRY PROFILE DISTORTIONS USING RUTHERFORD BACKSCATTERING [J].
CLEGG, JB ;
OCONNOR, DJ .
APPLIED PHYSICS LETTERS, 1981, 39 (12) :997-999
[5]   A MODEL FOR OXIDATION OF SILICON BY OXYGEN [J].
CRISTY, SS ;
CONDON, JB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) :2170-2174
[6]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[7]   PHYSICAL SOLUBILITY OF GASES IN FUSED SILICA [J].
DOREMUS, RH .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1966, 49 (09) :461-&
[8]   USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J].
FELDMAN, LC ;
SILVERMAN, PJ ;
WILLIAMS, JS ;
JACKMAN, TE ;
STENSGAARD, I .
PHYSICAL REVIEW LETTERS, 1978, 41 (20) :1396-1399
[9]  
HELMS CR, 1981, SEMICONDUCTOR SILICO, P455
[10]   DEFECTS IN SILICON SUBSTRATES [J].
HU, SM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :17-31