SIMULTANEOUS EXPOSURE AND DEVELOPMENT OF PHOTORESIST MATERIALS - ANALYTICAL MODEL

被引：3

作者：

AGMON, P ^{[1
]}

LIVANOS, AC ^{[1
]}

KATZIR, A ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91125 USA

来源：

APPLIED OPTICS | 1977年 / 16卷 / 10期

关键词：

D O I：

10.1364/AO.16.002612

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

收藏

页码：2612 / 2614

页数：3

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[J]. APPLIED OPTICS, 1974, 13 (01) : 129 - 139
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) : 1555 - &
[3] CHARACTERIZATION OF POSITIVE PHOTORESIST
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[4] LINEARITY AND ENHANCED SENSITIVITY OF SHIPLEY AZ-1350B PHOTORESIST
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[J]. APPLIED OPTICS, 1977, 16 (06) : 1633 - 1635
[5] SIMULTANEOUS EXPOSURE AND DEVELOPMENT TECHNIQUE FOR MAKING GRATINGS ON POSITIVE PHOTORESIST
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (04) : 196 - 199