CONDUCTION-BAND DISCONTINUITY OF GAINAS/INP HETEROJUNCTIONS WITH GRADED DONOR CONCENTRATION

被引：6

作者：

OGAWA, M ^{[1
]}

MIYOSHI, M ^{[1
]}

SHIMIZU, S ^{[1
]}

MURAKAMI, T ^{[1
]}

MIYOSHI, T ^{[1
]}

机构：

[1] KOBE UNIV, NAKA KU, KOBE 657, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 07期

关键词：

D O I：

10.1143/JJAP.27.L1334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1334 / L1336

页数：3

共 9 条

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[2] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS
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[3] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 295 - 297
[4] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS
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[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 282 - 284
[5] OGAWA M, 1988, IN PRESS T I ELE J C, V71
[6] A CAPACITANCE INVESTIGATION OF INGAAS/INP ISOTYPE HETEROJUNCTION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1502 - 1509
[7] DETERMINATION OF VALENCE AND CONDUCTION-BAND DISCONTINUITIES AT THE (GA,IN) P/GAAS HETEROJUNCTION BY C-V PROFILING
RAO, MA
CAINE, EJ
KROEMER, H
LONG, SI
BABIC, DI
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 643 - 649
[8] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION
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NAKAGOME, H
MIKAMI, O
ANDO, H
KANBE, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) : 864 - 870
[9] BAND DISCONTINUITY FOR GAAS ALGAAS HETEROJUNCTION DETERMINED BY C-V PROFILING TECHNIQUE
WATANABE, MO
YOSHIDA, J
MASHITA, M
NAKANISI, T
HOJO, A
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5340 - 5344

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