DEPOSITED SILICON-NITRIDE WITH LOW ELECTRON TRAPPING RATES

被引：17

作者：

PARK, YC

JACKSON, WB

SMITH, DL

JOHNSON, NM

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.354121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article, nitrogen-rich silicon nitride plasma deposited under conditions minimizing Si-H bonding is shown to possess extremely low bulk electron trapping rates which are as low or lower than plasma-deposited oxides produced using He dilution. The bulk trap density, measured by avalanche injection decreases as the rf power is decreased. The total charge trapped within these silicon nitrides reaches a saturation value determined by high field detrapping in thick nitride films.

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页码：381 / 386

页数：6

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