IMPROVED MATERIALS FOR MOVPE GROWTH OF GASB AND INSB

Some factors affecting the MOVPE growth of GaSb and InSb and structures based on these materials and their alloys are investigated. Trimethylantimony (TMSb) and tertiarybutyldimethylantimony (TBDMSb) have been synthesized and assessed by growing bulk layers of GaSb and InSb. The use of TBDMSb has allowed the growth of InSb at 400-degrees-C as compared with 450-degrees-C when using TMSb. All the alkyls used have had their pyrolysis kinetics determined under real growth conditions using in situ ultraviolet spectroscopy. A thorough study of the initial nucleation of GaSb onto GaAs substrates has been performed using atomic force microscopy (AFM), TEM (cross-sectional and plan view) and quasi-elastic light scattering (QLS). Bulk layers of GaSb have been grown using optimized and non-optimized buffer layers to assess the effect on optical, structural and electrical properties of the grown layers.