OXIDATION OF THE SI(100) SURFACE PROMOTED BY SR OVERLAYER - AN X-RAY PHOTOEMISSION-STUDY

被引：24

作者：

MESARWI, A ^{[1
]}

FAN, WC ^{[1
]}

IGNATIEV, A ^{[1
]}

机构：

[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interaction of strontium overlayers with atomically clean Si(100) surface has been studied by x-ray photoelectron spectroscopy. Also studied were the effects of Sr overlayers on the oxidation of silicon at different Sr coverage (0≤θ≤1.85) and different oxygen exposure. It is found that at low coverage, θ≤1 monolayer (ML), Sr interacts with the Si(100) surface to form a strong ionic bond. Also, Sr is found to significantly increase the oxidation of the Si(100) surface. Silicon oxidation increased with increasing Sr coverage to a maximum at θ≊1 ML. Above 1-ML Sr coverage, the rate of Si oxidation decreased with increasing coverage.

引用

页码：3609 / 3613

页数：5

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