NONLOCAL PSEUDOPOTENTIAL CALCULATION OF THE ELECTRONIC-PROPERTIES OF RELAXED GAAS(110) SURFACE

被引：65

作者：

ZUNGER, A

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.22.959

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：959 / 969

页数：11

共 57 条

[11] AN ALGORITHM FOR MACHINE CALCULATION OF COMPLEX FOURIER SERIES [J].

COOLEY, JW ;

TUKEY, JW .

MATHEMATICS OF COMPUTATION, 1965, 19 (90) :297-&

[12] SPECIAL POINTS IN 2-DIMENSIONAL BRILLOUIN ZONE [J].

CUNNINGHAM, SL .

PHYSICAL REVIEW B, 1974, 10 (12) :4988-4994

[13] ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].

DUKE, CB .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1978, 8 (01) :69-91

[14] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627

[15] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605

[16] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES [J].

FRENSLEY, WR ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :810-815

[17] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].

FRENSLEY, WR ;

KROEMER, H .

PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652

[18] SURFACE STATE BAND ON GAAS (110) FACE [J].

GREGORY, PE ;

SPICER, WE ;

CIRACI, S ;

HARRISON, WA .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514

[19] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J].

GUDAT, W ;

EASTMAN, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :831-837

[20] SEMICONDUCTOR CHARGE-DENSITIES WITH HARD-CORE AND SOFT-CORE PSEUDOPOTENTIALS [J].

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1979, 42 (10) :662-665

← 1 2 3 4 5 6 →