THE EFFECT OF DOSE ON THE GROWTH OF BURIED COSI2 LAYERS IN (111) AND (100) SI PRODUCED BY ION-IMPLANTATION

被引：12

作者：

MANTL, S

JEBASINSKI, R

HARTMANN, D

机构：

[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, W-5170 Jülich

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷

关键词：

D O I：

10.1016/0168-583X(91)95299-S

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Epitaxial CoSi2 layers have been fabricated by 100 and 200 keV Co+ implantation into (111) and (100) single-crystalline silicon. The dependence of Co concentration on ion dose was investigated systematically by varying the ion dose from 0.5 to 10 x 10(17) cm-2 for 200 keV and from 1 to 1.4 x 10(17) cm-2 for 100 keV implants. Rutherford backscattering (RBS), ion channeling and sheet resistivity measurements were used to characterize the samples. The Co peak concentration in the profile maximum depends linearly on ion dose up to the stoichiometric concentration of CoSi2. Above this value Co seems to be redistributed to both sides of the implantation profile and in addition Co atoms may be incorporated in the center of the CoSi2 unit cell.

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收藏

页码：666 / 670

页数：5

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