MODERATELY DOPED NMOS (M-LDD) - HOT-ELECTRON AND CURRENT DRIVE OPTIMIZATION

被引：20

作者：

KRIEGER, G ^{[1
]}

SIKORA, R ^{[1
]}

CUEVAS, PP ^{[1
]}

MISHELOFF, MN ^{[1
]}

机构：

[1] VLSI TECHNOL INC,PROC DEV THIN FILMS DIFFUS OXIDAT,SAN JOSE,CA 95131

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 01期

关键词：

D O I：

10.1109/16.65745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short-channel NMOS transistors with moderately doped drain (1014 cm-2), and variable sidewall oxide spacer thickness were fabricated and studied. The sensitivities of hot carrier degradation, current drive capability, and other device parameters to the sidewall spacer thickness were measured and evaluated. The results clearly indicate that a moderately doped drain (MLDD) provides a stable and well-optimized device, compared to a conventional LDD transistor with substantially lower implant dose. A simple model, explaining the observations, is proposed and discussed. © 1991 IEEE

引用

页码：121 / 127

页数：7

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