INVESTIGATION OF THE INTERFACE GRADING IN III-V HETEROSTRUCTURES BY DOUBLE-CRYSTAL DIFFRACTOMETRY

被引：9

作者：

FERRARI, C

FRANZOSI, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.342970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1544 / 1549

页数：6

共 10 条

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[7] THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES [J].

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