POSITRON BEAM STUDIES OF DOPED CZ-GROWN SILICON

被引：3

作者：

COLEMAN, PG

BAKER, JA

CHILTON, NB

机构：

[1] School of Physics, University of East Anglia, Norwich

来源：

VACUUM | 1990年 / 41卷 / 7-9期

关键词：

D O I：

10.1016/0042-207X(90)94027-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The diffusion of positrons in the near-surface regions of n-, n+, p- and p+ -Cz-grown silicon has been studied by implanting positrons with energies controllable in the range 1-32 keV and measuring the mean Doppler broadening of the annihilation line. While the first three samples exhibit normal positron diffusion to the surface, this diffusion appears to be much diminished in the p+ sample. This result is discussed in terms of (a) shallow trapping of positrons at B- centres, and (b) the effect of an electric field in the subsurface region.

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页码：1593 / 1594

页数：2

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