VARIATION OF THE MOBILITY AND THE 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION WITH INDIUM COMPOSITION IN DELTA-DOPED GAAS/INXGA1-XAS/GAAS PSEUDOMORPHIC STRUCTURES

被引：15

作者：

HSU, WC

CHEN, CM

LIN, W

机构：

[1] Department of Electrical Engineering, National Cheng Kung University, Tainan

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 08期

关键词：

D O I：

10.1063/1.349113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron mobility and the two-dimensional electron gas (2DEG) concentration in different indium compositions (0.1 < x < 0.6) delta-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures grown by low-pressure metalorganic chemical vapor deposition are studied. The electron mobilities of a delta-doped GaAs layer are comparable to those of previous reports. Furthermore, the maximum mobility (5500 and 33 000 cm2/V s at 300 and 77 K, respectively) of the proposed pseudomorphic structure appears at x = 0.37. Taking into account of strain and quantum effects, the variation trends of calculated 2DEG concentrations are in good agreement with the experimental results.

引用

页码：4332 / 4335

页数：4

共 12 条

[1] NOVEL PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES WITH GAAS-IN0.3 GA0.7 AS THIN STRAINED SUPERLATTICE ACTIVE LAYERS [J].