CHARACTERIZATION OF FURNACE-ANNEALED TISI2 FOR VLSI CIRCUIT APPLICATIONS

[1] AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2240 - 2245

[2] EFFECTS OF ION-BEAM MIXING ON THE PERFORMANCE AND RELIABILITY OF DEVICES WITH SELF-ALIGNED SILICIDE STRUCTURE [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) : 293 - 295

[3] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[4] THERMAL AND STRESS-ANALYSIS OF SEMICONDUCTOR WAFERS IN A RAPID THERMAL-PROCESSING OVEN [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1988, 1 (03) : 105 - 114

[5] TITANIUM SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1352 - 1357

[6] DOPANT REDISTRIBUTION IN SILICIDE SILICON AND SILICIDE POLYCRYSTALLINE SILICON BILAYERED STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1674 - 1688

[7] SELF-ALIGNED SILICIDES OR METALS FOR VERY LARGE-SCALE INTEGRATED-CIRCUIT APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1325 - 1331

[8] THE FORMATION OF TITANIUM SILICIDE BY ARSENIC ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1344 - 1351

[9] SILICIDE-SILICON INTERFACE DEGRADATION DURING TITANIUM SILICIDE POLYSILICON OXIDATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1456 - 1460

[10] WANG MS, 1987, 1987 P MULT MET TECH, V87

[1] AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2240 - 2245

[2] EFFECTS OF ION-BEAM MIXING ON THE PERFORMANCE AND RELIABILITY OF DEVICES WITH SELF-ALIGNED SILICIDE STRUCTURE [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) : 293 - 295

[3] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[4] THERMAL AND STRESS-ANALYSIS OF SEMICONDUCTOR WAFERS IN A RAPID THERMAL-PROCESSING OVEN [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1988, 1 (03) : 105 - 114

[5] TITANIUM SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1352 - 1357

[6] DOPANT REDISTRIBUTION IN SILICIDE SILICON AND SILICIDE POLYCRYSTALLINE SILICON BILAYERED STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1674 - 1688

[7] SELF-ALIGNED SILICIDES OR METALS FOR VERY LARGE-SCALE INTEGRATED-CIRCUIT APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1325 - 1331

[8] THE FORMATION OF TITANIUM SILICIDE BY ARSENIC ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1344 - 1351

[9] SILICIDE-SILICON INTERFACE DEGRADATION DURING TITANIUM SILICIDE POLYSILICON OXIDATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1456 - 1460

[10] WANG MS, 1987, 1987 P MULT MET TECH, V87