DAMAGE-FREE REACTIVE ION ETCHING OF SILICON IN NF3 AT LOW-TEMPERATURE

被引：18

作者：

KONUMA, M ^{[1
]}

BANHART, F ^{[1
]}

PHILLIPP, F ^{[1
]}

BAUSER, E ^{[1
]}

机构：

[1] MAX PLANCK INST MET RES,INST PHYS,W-7000 STUTTGART 80,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90254-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：265 / 268

页数：4

共 13 条

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