ANALYSIS OF BAND BENDING AT III-V-SEMICONDUCTOR INTERFACES BY RAMAN-SPECTROSCOPY

This article gives a survey of the application of Raman spectroscopy to analyze the electronic band bending at surfaces and interfaces of III-V semiconductors. Theoretical considerations are reviewed, concerning models for the development of band bending, Raman scattering in general and its application to surface regions. Experimental results of band-bending analysis by Raman spectroscopy are discussed for various systems, including gas-covered surfaces, semiconductor/metal interfaces, and heterostructures of different semiconductors. Furthermore, Raman spectroscopy is compared with other methods for the determination of band bending such as photoelectron spectroscopy. Special attention is paid to the investigation of buried interfaces and to the simultaneous analysis of band bending and structural properties by Raman spectroscopy.