AN INVESTIGATION OF INXGA1-XAS/GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：2

作者：

JEONG, J

SHAHID, MA

LEE, JC

SCHLESINGER, TE

MILNES, AG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.340369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5464 / 5468

页数：5

共 16 条

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APPLIED PHYSICS LETTERS, 1987, 50 (24) :1730-1732

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[5] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J].

FRITZ, IJ ;

GOURLEY, PL ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1004-1006

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HORNSTRA, J ;

BARTELS, WJ .

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[7] X-RAY CHARACTERIZATION OF INXGA1-XAS/GAAS QUANTUM WELLS [J].

JEONG, J ;

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MILNES, AG .

JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) :265-275

[8] PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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WATANABE, N .

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[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC GALNAS/ALLNAS MODULATION-DOPED HETEROSTRUCTURES [J].

KUO, JM ;

LALEVIC, B ;

CHANG, TY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :782-784

[10] STRAINED N-GA0.7AL0.3AS/INXGA1-XAS/GAAS MODULATION-DOPED STRUCTURES [J].

OKAMOTO, A ;

TOYOSHIMA, H ;

OHATA, K .

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