MASS-SPECTROMETER-CONTROLLED FABRICATION OF SI/GE SUPERLATTICES

被引:10
作者
VANDELEUR, RHM
SCHELLINGERHOUT, AJG
MOOIJ, JE
TUINSTRA, F
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10.1063/1.99227
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O59 [应用物理学];
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页码:1005 / 1007
页数:3
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共 14 条
[1]   STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].
ABSTREITER, G ;
BRUGGER, H ;
WOLF, T ;
JORKE, H ;
HERZOG, HJ .
PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444
[2]   CHARACTERIZATION OF THIN-LAYERS ON PERFECT CRYSTALS WITH A MULTIPURPOSE HIGH-RESOLUTION X-RAY DIFFRACTOMETER [J].
BARTELS, WJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :338-345
[3]   X-RAY-DIFFRACTION OF MULTILAYERS AND SUPERLATTICES [J].
BARTELS, WJ ;
HORNSTRA, J ;
LOBEEK, DJW .
ACTA CRYSTALLOGRAPHICA SECTION A, 1986, 42 :539-545
[4]   RECENT DEVELOPMENTS IN THE STRAINED LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J].
BEAN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1427-1429
[5]   NEW OPTICAL-TRANSITIONS IN STRAINED SI-GE SUPERLATTICES [J].
FROYEN, S ;
WOOD, DM ;
ZUNGER, A .
PHYSICAL REVIEW B, 1987, 36 (08) :4547-4550
[6]   A PERFORMANCE COMPARISON OF VACUUM DEPOSITION MONITORS EMPLOYING ATOMIC-ABSORPTION (AA) AND ELECTRON-IMPACT EMISSION-SPECTROSCOPY (EIES) [J].
GOGOL, CA ;
REAGAN, SH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :252-256
[7]  
GRAY DE, 1972, AM I PHYSICS HDB
[8]   ELECTRON-BEAM EVAPORATION SYNTHESIS OF A15 SUPERCONDUCTING COMPOUNDS - ACCOMPLISHMENTS AND PROSPECTS [J].
HAMMOND, RH .
IEEE TRANSACTIONS ON MAGNETICS, 1975, MA11 (02) :201-207
[10]   MULTISOURCE DEPOSITION RATE CONTROL USING A MASS-SPECTROMETER AS A SENSING ELEMENT [J].
LUTZ, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :309-312