DIFFUSION IN THIN SILICON FILMS FORMED BY ELECTROCHEMICAL ETCHING

被引：2

作者：

KAMINS, TI ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTR CORP, RES & DEV LAB, PALO ALTO, CA 94304 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 02期

关键词：

D O I：

10.1149/1.2401797

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：286 / 288

页数：3

共 13 条

[1] DOPED OXIDES AS DIFFUSION SOURCES .2. PHOSPHORUS INTO SILICON [J].

BARRY, ML .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) :1405-&

[2] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J].

BARRY, ML ;

OLOFSEN, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) :854-&

[3]

Carslaw H. S, 1959, CONDUCTION HEAT SOLI

[4] PREPARATION OF THIN SILICON CRYSTALS BY ELECTROCHEMICAL THINNING OF EPITAXIALLY GROWN STRUCTURES [J].

DIJK, HJAV ;

JONGE, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) :553-&

[5]

Dumin D. J., 1970, RCA Review, V31, P620

[6] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J].

KAMINS, TI ;

MANOLIU, J ;

TUCKER, RN .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :83-&

[7] NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED-CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMS [J].

KAMINS, TI .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (07) :915-+

[8] X-RAY MEASUREMENTS OF STRESS IN THIN SINGLE-CRYSTAL SILICON FILMS [J].

KAMINS, TI ;

MEIERAN, ES .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5064-5066

[9] ELECTROCHEMICALL THINNED N/N+ EPITAXIAL SILICON - METHOD AND APPLICATIONS [J].

MEEK, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1240-+

[10] MECHANICAL AND ELECTRICAL PROPERTIES OF EPITAXIAL SILICON FILMS ON SPINEL [J].

SCHLOTTERER, H .

SOLID-STATE ELECTRONICS, 1968, 11 (10) :947-+

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