SI-GE ALLOYS AND SUPERLATTICES FOR OPTOELECTRONICS

被引：34

作者：

PEARSALL, TP

机构：

[1] Department of Electrical Engineering, University of Washington, Seattle

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90177-W

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Important advances in materials science and technology are opening the field of optoelectronics to device structures based on silicon and germanium. Optoelectronics offers new functionality to silicon integrated circuits which previously were thought to be limited to strictly electronic applications. In this paper we review recent achievements in optical modulators, detectors and light emitters fabricated from silicon and germanium. These devices hail the entry of silicon technology into a niche previously reserved for compound semiconductors. Innovations in materials growth and processing of silicon-based heterostructures are the locomotive driving this important development into optoelectronic materials.

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页码：225 / 231

页数：7

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