A HIGH-POWER GAAS-MESFET WITH AN EXPERIMENTALLY OPTIMIZED PATTERN

被引：19

作者：

HIGASHISAKA, A

TAKAYAMA, Y

HASEGAWA, F

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.19981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1025 / 1029

页数：5

相关论文

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