THE SELECTIVITY OF POLY SI AND SIO2 ETCHING USING A NEGATIVE DC BIASING OF POWERED ELECTRODE

被引：4

作者：

BRCKA, J ^{[1
]}

HARMAN, R ^{[1
]}

BLACKBURN, A ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON, DEPT ELECTR, SOUTHAMPTON SO9 5NH, HANTS, ENGLAND

来源：

VACUUM | 1986年 / 36卷 / 7-9期

关键词：

D O I：

10.1016/0042-207X(86)90241-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：531 / 533

页数：3

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[9] LANGMUIR PROBE MEASUREMENTS ON CHF3 AND CF4 PLASMAS - THE ROLE OF IONS IN THE REACTIVE SPUTTER ETCHING OF SIO2 AND SI [J].

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