CHEMICAL BEAM EPITAXIAL-GROWTH OF INAS USING TRIMETHYLINDIUM AND ARSINE

被引：13

作者：

CHIU, TH

DITZENBERGER, JA

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 22期

关键词：

D O I：

10.1063/1.102972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth study of InAs by chemical beam epitaxy. Growth conditions for high quality epilayer has been determined from in situ reflection high-energy electron diffraction measurement, surface morphology, photoluminescence, and Hall measurement. The growth rate measurement shows that the pyrolysis characteristics of trimethylindium are qualitatively similar to that of triethylgallium which have previously been simulated by a surface chemical kinetics model. The boundary condition between In- and As-stabilized surface in the previously unexplored temperature range of 520-560 °C gives an activation energy of 3.1 eV for the As desorption from the InAs surface.

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页码：2219 / 2221

页数：3

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