RAMAN-SCATTERING CHARACTERIZATION OF TITANIUM SILICIDE FORMATION

被引:35
作者
NEMANICH, RJ [1 ]
FIORDALICE, RW [1 ]
JEON, HT [1 ]
机构
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
关键词
D O I
10.1109/3.27991
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:997 / 1002
页数:6
相关论文
共 25 条
[1]  
BAGLIN JEE, THIN FILMS INTERFACE
[2]  
BAGLIN JEE, 1983, P MATER RES SOC S, V25
[3]   TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM [J].
BERTI, M ;
DRIGO, AV ;
COHEN, C ;
SIEJKA, J ;
BENTINI, GG ;
NIPOTI, R ;
GUERRI, S .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3558-3565
[4]   THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS [J].
BEYERS, R .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :147-152
[5]   METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J].
BEYERS, R ;
SINCLAIR, R .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5240-5245
[6]   SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - DIFFUSION PARAMETERS AND BEHAVIOR AT ELEVATED-TEMPERATURES [J].
CHAMBERS, SA ;
HILL, DM ;
XU, F ;
WEAVER, JH .
PHYSICAL REVIEW B, 1987, 35 (02) :634-640
[7]   REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].
CHOW, TP ;
STECKL, AJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497
[8]   LOCALIZED EPITAXIAL-GROWTH OF C54 AND C49 TISI2 ON (111)SI [J].
FUNG, MS ;
CHENG, HC ;
CHEN, LJ .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1312-1314
[9]   FORMATION AND PROPERTIES OF TISI2 FILMS [J].
GULDAN, A ;
SCHILLER, V ;
STEFFEN, A ;
BALK, P .
THIN SOLID FILMS, 1983, 100 (01) :1-7
[10]   SOLID-STATE REACTIONS IN TITANIUM THIN-FILMS ON SILICON [J].
KATO, H ;
NAKAMURA, Y .
THIN SOLID FILMS, 1976, 34 (01) :135-138