共 22 条
- [1] ALLEN RE, 1980, SURFACE SCI, V110, pL625
- [2] SURFACE BANDS IN RELAXED CLEAVAGE SURFACE OF GAP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1256 - 1261
- [3] Surface Barrier of a Semiconductor as Function of Temperature in the Case of Complex Distributions of States. Calculations and Development. [J]. Journal de physique Paris, 1984, 45 (07): : 1197 - 1211
- [4] UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES - A REPRESENTATIVE III-V COMPOUND INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1075 - 1079
- [5] SURFACE PHOTOVOLTAGE SPECTROSCOPY - NEW APPROACH TO STUDY OF HIGH-GAP SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 130 - 135
- [6] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 831 - 837
- [7] ELECTRONIC SURFACE-STATES ON CLEAVED GAP(110) - INITIAL STEPS OF THE OXYGEN-CHEMISORPTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1212 - 1215
- [8] ELECTRONIC SURFACE-PROPERTIES OF CLEAVED GAP(110) [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 789 - 793
- [9] ELECTRONIC SURFACE PROPERTIES OF UHV-CLEAVED 3-5 COMPOUNDS [J]. SURFACE SCIENCE, 1977, 62 (02) : 472 - 486