ON THE CARRIER TRANSPORT MECHANISM IN POST-TRANSIT TOF EXPERIMENTS

Time-of-flight experiments in the post-transit regime probe the distribution and occupancy of deep gap states in an amorphous semiconductor. While it is straightforward to extract that distribution when multiple-trapping transport conditions are met, inconsistent results arise when they are not. Strong deep-trapping of carriers and hopping-assisted release are identified as processes which invalidate standard assumptions. Post-transit analysis then allows an examination of these transport mechanisms rather than the gap-state density.