CHARACTERIZATION OF ROUGHNESS AND DEFECTS AT AN SI/SIO2 INTERFACE FORMED BY LATERAL SOLID-PHASE EPITAXY USING HIGH-RESOLUTION ELECTRON-MICROSCOPY

被引：4

作者：

KAWARADA, H

UENO, T

OHDOMARI, I

KUNII, Y

机构：

[1] WASEDA UNIV, SCH SCI & ENGN, TOKYO 160, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.341003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2641 / 2644

页数：4

共 17 条

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