LATERAL SOLID-PHASE EPITAXY OF VACUUM-DEPOSITED AMORPHOUS SI FILM OVER RECESSED SIO2 PATTERNS

被引：14

作者：

KUNII, Y

TABE, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 05期

关键词：

D O I：

10.1143/JJAP.24.L352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L352 / L354

页数：3

共 13 条

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[8] AMORPHOUS-SI CRYSTALLINE-SI FACET FORMATION DURING SI SOLID-PHASE EPITAXY NEAR SI/SIO2 BOUNDARY [J].

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KAJIYAMA, K .

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[9]

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