DOPING AND DIFFUSION BEHAVIOR OF FE IN MOVPE GROWN INP LAYERS

被引：7

作者：

FRANKE, D

HARDE, P

WOLFRAM, P

GROTE, N

机构：

[1] Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, D-1000 Berlin 10

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 100卷 / 03期

关键词：

D O I：

10.1016/0022-0248(90)90230-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Doping and diffusion characteristics of Fe in semi-insulating AP-MOVPE grown InP layers were assumed using the SIMS technique. Fairly flat Fe depth profiles and a linear doping curve were obtained at concentrations of up to the lower range of 1017 cm-3. Accumulation of Fe at the substrate/layer interface was found on quite a few samples indicating a gettering effect of the substrate. Very little, if not negligible, diffusion was observed on alternately Fe-doped/undoped structures even after high-temperature heat treatment as long as the Fe content was in the midrange of 1016 cm-3, or lower. © 1990.

引用

收藏

页码：309 / 312

页数：4

相关论文

共 12 条

[1] VAPOR PRESSURE AND THIRD-LAW ENTROPY OF FERROCENE [J].

ANDREWS, JTS ;

WESTRUM, EF .

JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1969, 17 (02) :349-&

[2] PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J].

CHU, SNG ;

NAKAHARA, S ;

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2795-2798

[3]

GROTE N, 1989, P ESSDERC 89 BERLIN, P67

[4] THE GROWTH OF IRON DOPED SEMI-INSULATING INP BY HYDRIDE VAPOR-PHASE EPITAXY IN A NITROGEN AMBIENT [J].

KARLICEK, RF .

JOURNAL OF CRYSTAL GROWTH, 1988, 91 (1-2) :33-38

[5] MONOLITHIC INTEGRATION OF INGAAS P-I-N PHOTODETECTOR WITH FULLY ION-IMPLANTED INP JFET AMPLIFIER [J].

KIM, SJ ;

GUTH, G ;

VELLACOLEIRO, GP ;

SEABURY, CW ;

SPONSLER, WA ;

RHOADES, BJ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :447-449

[6] EPITAXIAL-GROWTH OF HIGHLY FE-DOPED SEMI-INSULATING INP LAYERS BY N2 CARRIER GAS MIXED HYDRIDE VAPOR-PHASE EPITAXY [J].

KURODA, N ;

SUGOU, S ;

KOIZUMI, Y ;

UJI, T .

JOURNAL OF CRYSTAL GROWTH, 1989, 96 (01) :7-12

[7] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J].

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) :10-14

[8]

NAKAI K, 1988, I PHYS C SER, V91, P199

[9] ACTIVATION RATIO OF FE IN FE-DOPED SEMIINSULATING INP EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY AND METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SUGAWARA, M ;

KONDO, M ;

NAKAI, K ;

YAMAGUCHI, A ;

NAKAJIMA, K .

APPLIED PHYSICS LETTERS, 1987, 50 (20) :1432-1434

[10] SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER [J].

TANAKA, K ;

HOSHINO, M ;

WAKAO, K ;

KOMENO, J ;

ISHIKAWA, H ;

YAMAKOSHI, S ;

IMAI, H .

APPLIED PHYSICS LETTERS, 1985, 47 (11) :1127-1129