USE OF O-18 ISOTOPIC LABELING TO STUDY THERMAL DRY OXIDATION OF SILICON AS A FUNCTION OF TEMPERATURE AND PRESSURE

被引：54

作者：

TRIMAILLE, I

RIGO, S

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90420-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：65 / 80

页数：16

共 17 条

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