HILLOCKS ON HALF-MICRON ALUMINUM LINES

被引:4
作者
PICO, CA [1 ]
BONIFIELD, TD [1 ]
机构
[1] TEXAS INSTRUMENTS INC,CORP RES DEV & ENGN,DALLAS,TX 75265
关键词
D O I
10.1557/JMR.1991.1817
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new regime of hillock growth has been observed in patterned Al98.5wt.%Si1.0wt.%Cu0.5wt.% films. The "surface" hillock and "side" hillock, which have been seen previously, form on patterned metal lines having linewidths greater than the larger Al alloy grain sizes (approximately 3-mu-m). None is seen on the fabricated lines having linewidths between 0.9 and 2-mu-m where long-range grain boundary diffusion cannot occur because of its bamboo structure. However, a new type of hillock, the "line hillock", occurs in structures having linewidths of 0.6-mu-m. The presence of this last type of hillock is inconsistent with the current understanding of hillock formation and may present severe restrictions on the down-sizing of ultra-large-scale integrated devices.
引用
收藏
页码:1817 / 1819
页数:3
相关论文
共 12 条
[1]  
BONIFIELD TD, COMMUNICATION
[2]   THERMALLY INDUCED HILLOCK FORMATION IN AL-CU FILMS [J].
CHANG, CY ;
VOOK, RW .
JOURNAL OF MATERIALS RESEARCH, 1989, 4 (05) :1172-1181
[3]   ISOTHERMAL ANNEALING OF HILLOCKS IN AL-CU FILMS [J].
CHANG, CY ;
VOOK, RW ;
LEE, YC ;
HOSHI, I .
THIN SOLID FILMS, 1989, 181 :57-63
[4]   HILLOCK-FREE INTEGRATED-CIRCUIT METALLIZATIONS BY AL-AL-O LAYERING [J].
FAITH, TJ .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4630-4639
[5]  
Gardner D. S., 1984, 1984 Proceedings of the First International IEEE VLSI Multilevel Interconnection Conference (Cat. No. 84CH1992-2), P68
[6]  
Hieber H., 1986, 24th Annual Proceedings Reliability Physics 1986 (Cat. No.86CH2256-6), P253, DOI 10.1109/IRPS.1986.362142
[7]   VOID FORMATION MECHANISM IN VLSI ALUMINUM METALLIZATION [J].
HINODE, K ;
ASANO, I ;
HOMMA, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) :1050-1055
[8]   STRESS-INDUCED GRAIN-BOUNDARY FRACTURES IN AL-SI INTERCONNECTS [J].
HINODE, K ;
OWADA, N ;
NISHIDA, T ;
MUKAI, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :518-522
[9]   STRESS-RELAXATION AND HILLOCK GROWTH IN THIN-FILMS [J].
JACKSON, MS ;
LI, CY .
ACTA METALLURGICA, 1982, 30 (11) :1993-2000
[10]   THERMAL-STABILITY OF PB-ALLOY JOSEPHSON JUNCTION ELECTRODE MATERIALS .7. CONCENTRATION RANGE OF SINGLE EPSILON-PHASE PB-BI FILMS USED IN COUNTERELECTRODES [J].
MURAKAMI, M ;
HUANG, HCW ;
ANGILELLO, J ;
GILBERT, BL .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :738-742