SPUTTERING PROCESS OF CU2S IN AN AR ATMOSPHERE

We have investigated the sputtering processes of a Cu//2S target in an Ar atmosphere to produce thin Films. The study of the plasma was carried out by means of glow discharge optical and mass spectroscopies (GDOS and GDMS) combined with deposition rate measurements, X-ray diffraction analysis and electrical properties of the films. A preferential sulfur extraction mechanism was responsible for a transient behavior in deposition rate and physical properties of the films. A stationary state was reached after 80 min sputtering of a mechanically cleaned Cu//2S target. The films showed a resistivity of 5 multiplied by 10** minus **3 OMEGA cm and djurleite structure.