INSITU MOBILITY PROFILING OF GAAS-MESFETS USING THE HALL CURRENT TECHNIQUE

[1] AUTOMATIC ELECTROCHEMICAL PROFILING OF HALL-MOBILITY IN SEMICONDUCTORS [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 648 - 650

[2] ANDREOU AG, 1986, THESIS J HOPKINS U

[3] BEER AC, 1963, SOLID STATE PHYSIC S, V4

[4] CHIEN CL, 1981, HALL EFFECT ITS APPL

[5] COLLIN RE, 1960, FIELD THEORY GUIDED, P580

[6] DOBROVOLSKII VN, 1963, SOV PHYS-SOL STATE, V4, P2025

[7] Friedman B, 1956, PRINCIPLES TECHNIQUE

[8] A METAL-OXIDE-SEMICONDUCTOR (MOS) HALL ELEMENT [J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 571 - &

[9] ELECTRON HALL EFFECT IN SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1145 - &

[10] CHARGE CONTROL AND GEOMETRIC MAGNETORESISTANCE OF A GATED ALGAAS GAAS HETEROJUNCTION TRANSISTOR [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4431 - 4437

[1] AUTOMATIC ELECTROCHEMICAL PROFILING OF HALL-MOBILITY IN SEMICONDUCTORS [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 648 - 650

[2] ANDREOU AG, 1986, THESIS J HOPKINS U

[3] BEER AC, 1963, SOLID STATE PHYSIC S, V4

[4] CHIEN CL, 1981, HALL EFFECT ITS APPL

[5] COLLIN RE, 1960, FIELD THEORY GUIDED, P580

[6] DOBROVOLSKII VN, 1963, SOV PHYS-SOL STATE, V4, P2025

[7] Friedman B, 1956, PRINCIPLES TECHNIQUE

[8] A METAL-OXIDE-SEMICONDUCTOR (MOS) HALL ELEMENT [J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 571 - &

[9] ELECTRON HALL EFFECT IN SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1145 - &

[10] CHARGE CONTROL AND GEOMETRIC MAGNETORESISTANCE OF A GATED ALGAAS GAAS HETEROJUNCTION TRANSISTOR [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4431 - 4437