SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION (PECVD) OF SIH4/NH3/N2 MIXTURES - SOME PHYSICAL-PROPERTIES

被引：16

作者：

LING, CH

KWOK, CY

PRASAD, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 10期

关键词：

D O I：

10.1143/JJAP.25.1490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1490 / 1494

页数：5

共 15 条

[1] A COMPARISON BETWEEN SILICON-NITRIDE FILMS MADE BY PCVD OF N2-SIH4/AR AND N2-SIH4/HE
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VANCALSTER, A
LOOS, H
LEQUESNE, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1763 - 1766
[2] CHANGE OF ETCH RATE ASSOCIATED WITH AMORPHOUS TO CRYSTALLINE TRANSITION IN CVD LAYERS OF SILICON
BOXALL, BA
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (10) : 873 - 874
[3] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES
CHOW, R
LANFORD, WA
WANG, KM
ROSLER, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5630 - 5633
[4] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE
DUN, H
PAN, P
WHITE, FR
DOUSE, RW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1555 - 1563
[5] COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD
FUJITA, S
ZHOU, NS
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L100 - L102
[6] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7] KGUYEN VS, 1984, J ELECTROCHEM SOC, V131, P2348
[8] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
LANFORD, WA
RAND, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477
[9] EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON-NITRIDE FILMS PREPARED IN THE TEMPERATURE-RANGE 50-300-DEGREES-C
LING, CH
KWOK, CY
PRASAD, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09): : 1238 - 1239
[10] LING CH, 1985, STATUS SOLIDI A, V89, pK39

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