EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON-NITRIDE FILMS PREPARED IN THE TEMPERATURE-RANGE 50-300-DEGREES-C

被引：7

作者：

LING, CH

KWOK, CY

PRASAD, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 09期

关键词：

D O I：

10.1143/JJAP.24.1238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1238 / 1239

页数：2

共 9 条

[1] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES
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ROSLER, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5630 - 5633
[2] CLAASEN WAP, 1983, J ELECTROCHEM SOC, V130, P1249
[3] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE
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PAN, P
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1555 - 1563
[4] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
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RAND, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477
[5] OBSERVATION OF AN ANOMALOUSLY HIGH ETCH RATE IN PLASMA-ENHANCED CVD SILICON-NITRIDE FILMS
LING, CH
KWOK, CY
PRASAD, K
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 84 (01): : K1 - K4
[6] THE VARIATION OF PHYSICAL-PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE AND OXYNITRIDE WITH THEIR COMPOSITIONS
NGUYEN, VS
BURTON, S
PAN, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2348 - 2358
[7] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION
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LEVINSTEIN, HJ
SMITH, TE
QUINTANA, G
HASZKO, SE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 601 - 608
[8] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
WELLS, VA
HAMPY, RE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1750 - 1754
[9] STRUCTURAL AND ELECTRICAL-PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE FROM SIH4-N2 GAS-MIXTURE
ZHOU, NS
FUJITA, S
SASAKI, A
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (01) : 55 - 72

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