H-INDUCED PASSIVATION OF GAAS(110)-BE SURFACE-ACCEPTOR SYSTEMS

被引：4

作者：

KHOO, GS ^{[1
]}

ONG, CK ^{[1
]}

机构：

[1] NANYANG TECHNOL UNIV, SCH SCI, DIV PHYS, SINGAPORE 1025, SINGAPORE

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.47.16369

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Complete neglect of differential overlap cluster calculations have been performed for H+ on a clean GaAs(110) surface. The results demonstrate that H+ prefers to bond with the surface As atom rather than the surface Ga atom. Investigation of a microscopic model for hydrogen (H)-induced passivation on p-type GaAs(110) surfaces, where a surface Ga atom is replaced by a Be acceptor atom, also shows that, in equilibrium, the H atom attaches itself to the dangling bond of the As atom next to the Be atom. Passivation occurs due to compensation when the H atom captures a free hole to form H+ which then subsequently finds the As atom next to the acceptor. This microscopic model may account for the As-H stretching lines observed in infrared experiments as well as for the absence of Ga-H lines.

引用

页码：16369 / 16372

页数：4

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