学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
COMMENT ON PHOTOEMISSION FROM NEGATIVE-ELECTRON-AFFINITY GAASP WITH A DIRECT OR AN INDIRECT BAND-GAP
被引:3
作者
:
BURT, MG
论文数:
0
引用数:
0
h-index:
0
BURT, MG
机构
:
来源
:
JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
1978年
/ 11卷
/ 08期
关键词
:
D O I
:
10.1088/0022-3727/11/8/010
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1189 / 1193
页数:5
相关论文
共 10 条
[1]
STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS
[J].
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
BURT, MG
;
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
INKSON, JC
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(01)
:43
-53
[2]
ELECTRON-EMISSION FROM SI(100) NEGATIVE ELECTRON-AFFINITY SURFACES
[J].
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 OHE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 OHE,ENGLAND
BURT, MG
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1977,
10
(08)
:1161
-1166
[3]
EMISSION FROM (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM-ARSENIDE
[J].
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
BURT, MG
;
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
INKSON, JC
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(01)
:L5
-L7
[4]
EMISSION OF X ELECTRONS FROM (110) GAAS ACTIVATED TO NEGATIVE ELECTRON AFFINITY
[J].
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND
BURT, MG
;
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND
INKSON, JC
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1975,
8
(01)
:L3
-L5
[5]
INTERPRETATION OF SURFACE BOUNDARY-CONDITIONS IN DIFFUSION-MODEL FOR NEA PHOTOEMISSION
[J].
CLARK, MG
论文数:
0
引用数:
0
h-index:
0
机构:
MINIST DEF,ROY SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
MINIST DEF,ROY SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
CLARK, MG
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(14)
:2139
-2153
[6]
RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING
[J].
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
CRAFORD, MG
;
SHAW, RW
论文数:
0
引用数:
0
h-index:
0
SHAW, RW
;
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
HERZOG, AH
;
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
GROVES, WO
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(10)
:4075
-&
[7]
HIGH QUANTUM EFFICIENCY PHOTOEMISSION FROM GAAS1-XPX ALLOYS
[J].
ESCHER, JS
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
ESCHER, JS
;
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
ANTYPAS, GA
.
APPLIED PHYSICS LETTERS,
1977,
30
(07)
:314
-316
[8]
DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS
[J].
JAMES, LW
论文数:
0
引用数:
0
h-index:
0
JAMES, LW
;
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
;
EDGECUMBE, J
论文数:
0
引用数:
0
h-index:
0
EDGECUMBE, J
;
MOON, RL
论文数:
0
引用数:
0
h-index:
0
MOON, RL
;
BELL, RL
论文数:
0
引用数:
0
h-index:
0
BELL, RL
.
JOURNAL OF APPLIED PHYSICS,
1971,
42
(12)
:4976
-+
[9]
ELECTRON-ENERGY DISTRIBUTIONS FROM GAP WITH NEGATIVE ELECTRON-AFFINITY .1. EMISSION PROPERTIES OF THERMALIZED ELECTRONS
[J].
PIAGET, C
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL, F-94450 BREVANNES, FRANCE
PIAGET, C
;
VANNIMENUS, J
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL, F-94450 BREVANNES, FRANCE
VANNIMENUS, J
;
SAGET, P
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL, F-94450 BREVANNES, FRANCE
SAGET, P
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
:3901
-3906
[10]
SERAPHIN BO, 1967, SEMICONDUCTORS SEMIM, P513
←
1
→
共 10 条
[1]
STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS
[J].
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
BURT, MG
;
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND
INKSON, JC
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(01)
:43
-53
[2]
ELECTRON-EMISSION FROM SI(100) NEGATIVE ELECTRON-AFFINITY SURFACES
[J].
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 OHE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 OHE,ENGLAND
BURT, MG
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1977,
10
(08)
:1161
-1166
[3]
EMISSION FROM (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM-ARSENIDE
[J].
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
BURT, MG
;
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB2 0HE,ENGLAND
INKSON, JC
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(01)
:L5
-L7
[4]
EMISSION OF X ELECTRONS FROM (110) GAAS ACTIVATED TO NEGATIVE ELECTRON AFFINITY
[J].
BURT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND
BURT, MG
;
INKSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND
UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND
INKSON, JC
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1975,
8
(01)
:L3
-L5
[5]
INTERPRETATION OF SURFACE BOUNDARY-CONDITIONS IN DIFFUSION-MODEL FOR NEA PHOTOEMISSION
[J].
CLARK, MG
论文数:
0
引用数:
0
h-index:
0
机构:
MINIST DEF,ROY SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
MINIST DEF,ROY SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
CLARK, MG
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(14)
:2139
-2153
[6]
RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING
[J].
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
CRAFORD, MG
;
SHAW, RW
论文数:
0
引用数:
0
h-index:
0
SHAW, RW
;
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
HERZOG, AH
;
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
GROVES, WO
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(10)
:4075
-&
[7]
HIGH QUANTUM EFFICIENCY PHOTOEMISSION FROM GAAS1-XPX ALLOYS
[J].
ESCHER, JS
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
ESCHER, JS
;
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
ANTYPAS, GA
.
APPLIED PHYSICS LETTERS,
1977,
30
(07)
:314
-316
[8]
DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS
[J].
JAMES, LW
论文数:
0
引用数:
0
h-index:
0
JAMES, LW
;
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
;
EDGECUMBE, J
论文数:
0
引用数:
0
h-index:
0
EDGECUMBE, J
;
MOON, RL
论文数:
0
引用数:
0
h-index:
0
MOON, RL
;
BELL, RL
论文数:
0
引用数:
0
h-index:
0
BELL, RL
.
JOURNAL OF APPLIED PHYSICS,
1971,
42
(12)
:4976
-+
[9]
ELECTRON-ENERGY DISTRIBUTIONS FROM GAP WITH NEGATIVE ELECTRON-AFFINITY .1. EMISSION PROPERTIES OF THERMALIZED ELECTRONS
[J].
PIAGET, C
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL, F-94450 BREVANNES, FRANCE
PIAGET, C
;
VANNIMENUS, J
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL, F-94450 BREVANNES, FRANCE
VANNIMENUS, J
;
SAGET, P
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL, F-94450 BREVANNES, FRANCE
SAGET, P
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
:3901
-3906
[10]
SERAPHIN BO, 1967, SEMICONDUCTORS SEMIM, P513
←
1
→