CONTROL OF MELT-FRONT VELOCITY DURING PULSED LASER ANNEALING

被引：13

作者：

WOOD, RF

GILES, GE

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 06期

关键词：

D O I：

10.1063/1.92382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：422 / 423

页数：2

共 13 条

[1]

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[7] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

WANG, JC ;

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[8] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

WHITE, CW ;

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YOUNG, RT .

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[9] SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :738-749

[10] MODEL FOR NON-EQUILIBRIUM SEGREGATION DURING PULSED LASER ANNEALING [J].

WOOD, RF .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :302-304

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