INVESTIGATION OF THE OXYGEN-VACANCY (A-CENTER) DEFECT COMPLEX PROFILE IN NEUTRON-IRRADIATED HIGH-RESISTIVITY SILICON JUNCTION PARTICLE DETECTORS

被引：53

作者：

LI, Z

KRANER, HW

VERBITSKAYA, E

EREMIN, V

IVANOV, A

RATTAGGI, M

RANCOITA, PG

RUBINELLI, FA

FONASH, SJ

DALE, C

MARSHALL, P

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA

[2] INFN,MILAN,ITALY

[3] PENN STATE UNIV,CTR ELECTR MAT & PROC,UNIV PK,PA 16802

[4] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The distribution of the A-center (oxygen-vacancy) in neutron damaged silicon detectors has been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon wafer depth for medium resistivity (0.1 to 0.2 kOMEGA-cm) silicon detectors and high resistivity (> 4 kOMEGA-cm) high temperature (1200-degrees-C) oxidized detectors. A positive filling pulse was needed to detect the A-centers in high resistivity silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. The A-center was not observed in a sample from a high temperature oxidation with TCA having a very high carbon content.

引用

页码：1730 / 1738

页数：9

共 23 条

[1] DEFECT STATES IN 2.0-MEV ELECTRON-IRRADIATED PHOSPHORUS-DOPED SILICON [J].