PARAMETERS FOR POINT-DEFECT DIFFUSION AND RECOMBINATION

被引：19

作者：

LAW, ME

机构：

[1] Integrated Electronics Center, Department of Electrical Engineering, University of Florida, Gainesville, FL

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1991年 / 10卷 / 09期

关键词：

D O I：

10.1109/43.85758

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Point-defect kinetics are important for understanding and modeling dopant diffusion in silicon. This paper describes models for point-defect transport and recombination used in SUPREM-IV, and does extensive fitting for the model parameters. The experimental data used are from experiments on oxidation-enhanced diffusion (OED). Interstitial traps are shown to be critical for consistent agreement with experimental data. Point-defect parameters in lightly doped regions are extracted and fit to Arrhenius expressions.

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页码：1125 / 1131

页数：7

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