MECHANISMS OF POSITIVE GATE-BIAS STRESS-INDUCED INSTABILITIES IN CMOS TRANSISTORS

被引：5

作者：

DIMITRIJEV, S ^{[1
]}

ZUPAC, D ^{[1
]}

STOJADINOVIC, N ^{[1
]}

机构：

[1] UNIV NIS, FAC ELECTR ENGN, BEOGRADSKA 14, YU-18000 NIS, YUGOSLAVIA

来源：

MICROELECTRONICS RELIABILITY | 1987年 / 27卷 / 06期

关键词：

D O I：

10.1016/0026-2714(87)90762-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1001 / 1016

页数：16

共 25 条

[1] MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION
BENEDETTO, JM
BOESCH, HE
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1461 - 1466
[2] ELECTRICAL TECHNIQUE TO MEASURE THE RADIATION SUSCEPTIBILITY OF MOS GATE INSULATORS
BOESCH, HE
MCGARRITY, JM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) : 4814 - 4818
[3] SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE
BOESCH, HE
MCLEAN, FB
BENEDETTO, JM
MCGARRITY, JM
BAILEY, WE
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1191 - 1197
[4] RADIATION FAILURE MODES IN CMOS INTEGRATED-CIRCUITS
BURGHARD, RA
GWYN, CW
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) : 300 - 306
[5] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING
DIMARIA, DJ
WEINBERG, ZA
AITKEN, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906
[6] DIMITRIJEV S, IN PRESS SOLID ST EL
[7] DEFECT STRUCTURE AND GENERATION OF INTERFACE STATES IN MOS STRUCTURES
DOTHANH, L
ASLAM, M
BALK, P
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (08) : 829 - 840
[8] USING A 10-KEV X-RAY SOURCE FOR HARDNESS ASSURANCE
FLEETWOOD, DM
BEEGLE, RW
SEXTON, FW
WINOKUR, PS
MILLER, SL
TREECE, RK
SCHWANK, JR
JONES, RV
MCWHORTER, PJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1330 - 1336
[9] GOLUBOVIC S, 17TH EUR SOL STAT DE
[10] EFFECT OF CHLORINE ON NEGATIVE BIAS INSTABILITY IN MOS STRUCTURES
HESS, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) : 740 - 743

← 1 2 3 →