DESIGN AND PROCESS-DEVELOPMENT OF A NOVEL MULTI-WAFER OMVPE REACTOR FOR GROWING VERY UNIFORM GAAS AND ALGAAS EPITAXIAL LAYERS

被引：2

作者：

HUANG, RT

KASEMSET, D

NOURI, N

COLVARD, C

ACKLEY, D

机构：

[1] SIEMENS RES & TECHNOL LABS,PRINCETON,NJ 08540

[2] MICROWAVE SEMICOND CORP,SOMERSET,NJ 08873

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 05期

关键词：

D O I：

10.1007/BF02657474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：603 / 609

页数：7

相关论文

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