ROOM-TEMPERATURE PHOTOLUMINESCENCE IN THE 1-MU-M REGION FROM INAS MONOLAYER STRUCTURES

(InAs)1(GaAs)2 superlattice structures have been grown on GaAs(001) using molecular beam epitaxy and the photoluminescence experiments performed on them demonstrate that it is possible to modify the band gap of the binary InAs/GaAs system from 0.85 to 1.07 mum at 13 K. Most importantly, by annealing the sample in a hydrogen plasma, impurities as well as nonradiative centers are passivated, allowing intrinsic luminescence to be observed up to 1.14 mum at room temperature. X-ray diffraction measurements also performed show that the as-grown samples are indeed superlattices consisting of InAs and GaAs layers of thickness 1 and 2 monolayers, respectively.