FILM DEPOSITION TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY FOR ACCUMULATION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：15

作者：

HIROTA, Y ^{[1
]}

OKAMURA, M ^{[1
]}

YAMAGUCHI, E ^{[1
]}

HISAKI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, APPL ELECTR LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1328 / 1337

页数：10

共 45 条

[31]

SAWADA T, 1984, IEEE T ELECTRON DEV, V13, P1038

[32] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[33] EFFECTIVE MOBILITY OF ELECTRONS IN SURFACE-LAYER OF SEMIINSULATING AND P-TYPE INP SUBSTRATES [J].

TAKAGI, S ;

SUGANO, T .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2387-2391

[34] HIGH MOBILITY INSULATED GATE TRANSISTORS ON INP [J].

TAYLOR, MJ ;

LILE, DL ;

NEDOLUHA, AK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :522-526

[35]

UEMURA Y, 1970, P 2ND C SOL STAT DEV

[36]

UEMURA Y, 1971, J JAPAN SOC APPL P S, V40, P205

[37] SIMPLE BALLISTIC MODEL FOR VACANCY MIGRATION [J].

VANVECHTEN, JA .

PHYSICAL REVIEW B, 1975, 12 (04) :1247-1251

[38] CONSEQUENCES OF ANION VACANCY NEAREST-NEIGHBOR HOPPING IN III-V-COMPOUND SEMICONDUCTORS - DRIFT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

VANVECHTEN, JA ;

WAGER, JF .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1956-1960

[39] COMPARISON OF THEORY WITH QUENCHING EXPERIMENTS FOR ENTROPY AND ENTHALPY OF VACANCY FORMATION IN SI AND GE [J].

VANVECHTEN, JA ;

THURMOND, CD .

PHYSICAL REVIEW B, 1976, 14 (08) :3551-3557

[40] ASYMMETRY OF ANION AND CATION VACANCY MIGRATION ENTHALPIES IN III-V COMPOUND SEMICONDUCTORS - ROLE OF THE KINETIC-ENERGY [J].

VANVECHTEN, JA ;

WAGER, JF .

PHYSICAL REVIEW B, 1985, 32 (08) :5259-5264

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